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| Parameter | NAND04GW3B2DN6E | NAND04GW3C2BN6E | |
|---|---|---|---|
IC package | Package | 48-TSOP | |
Manufacturer | Manufacturer | Numonyx/ST Micro | |
Working temperature | twork | -40 ~ 85 | |
Supply voltage | Vsup | 2.7 V ~ 3.6 V | |
Memory organization | Structure | 4G (512M x 8) | |
Memory connection interface | Interface | Параллельный | |
PROM type | Type | FLASH - Nand | |