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| Parameter | NAND04GR3B2DN6E | |
|---|---|---|
IC package | Package | 48-TSOP |
Manufacturer | Manufacturer | Numonyx/ST Micro |
Working temperature | twork | -40 ~ 85 |
Supply voltage | Vsup | 1.7 V ~ 1.95 V |
Memory organization | Structure | 4G (512M x 8) |
Memory connection interface | Interface | Параллельный |
PROM type | Type | FLASH - Nand |