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| Parameter | NAND01GW4B2AN6E | |
|---|---|---|
IC package | Package | 48-TSOP |
Manufacturer | Manufacturer | STMicroelectronics |
Working temperature | twork | -40 ~ 85 |
Supply voltage | Vsup | 2.7 V ~ 3.6 V |
Memory organization | Structure | 1G (64M x 16) |
Memory connection interface | Interface | Параллельный |
PROM type | Type | FLASH - Nand |