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Parameter | 11AA040-I/MS | 11AA040-I/P | 11AA040-I/SN | 11AA040T-I/MNY | 11AA040T-I/MS | 11AA040T-I/SN | 11AA040T-I/TT | |
---|---|---|---|---|---|---|---|---|
IC package | Package | 8-MSOP, Micro8™, 8-uMAX, 8-uSOP, | 8-DIP (300 mil) | 8-SOIC (3.9мм ширина) | 8-TDFN | 8-MSOP, Micro8™, 8-uMAX, 8-uSOP, | 8-SOIC (3.9мм ширина) | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 |
Manufacturer | Manufacturer | Microchip Technology | ||||||
Working temperature | twork | -40 ~ 85 | ||||||
Supply voltage | Vsup | 1.8 V ~ 5.5 V | ||||||
Memory organization | Structure | 512 x 8 | ||||||
Memory connection interface | Interface | UNI/O™ (Single Wire) | ||||||
Frequency | f | 100 kHz | ||||||
PROM type | Type | EEPROM |