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M27C256B-10B6

M27C256, M27C256B-10B6, M27C256B-10C6, M27C256B-10C6TR, M27C256B-12B1, M27C256B-12C1, M27C256B-12C6, M27C256B-15B1, M27C256B-15C1, M27C256B-70C1, M27C256B-70C6, M27C256B-90B1, M27C256B-90B6, M27C256B-90C1, M27C256B-90C6

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Description

Parameters

ParameterM27C256B-10B6M27C256B-10C6M27C256B-10C6TRM27C256B-12B1M27C256B-12C1M27C256B-12C6M27C256B-15B1M27C256B-15C1M27C256B-70C1M27C256B-70C6M27C256B-90B1M27C256B-90B6M27C256B-90C1M27C256B-90C6
IC package
Package
28-DIP (600 mil)32-PLCC32-PLCC28-DIP (600 mil)32-PLCC32-PLCC28-DIP (600 mil)32-PLCC32-PLCC32-PLCC28-DIP (600 mil)28-DIP (600 mil)32-PLCC32-PLCC
Manufacturer
Manufacturer
STMicroelectronics
Working temperature
twork
-40 ~ 85-40 ~ 85-40 ~ 850 ~ 700 ~ 70-40 ~ 850 ~ 700 ~ 700 ~ 70-40 ~ 850 ~ 70-40 ~ 850 ~ 70-40 ~ 85
Supply voltage
Vsup
4.5 V ~ 5.5 V
Query time
TQ
100 ns100 ns100 ns120 ns120 ns120 ns150 ns150 ns70 ns70 ns90 ns90 ns90 ns90 ns
Memory organization
Structure
32k x 8
Memory connection interface
Interface
Параллельный
ROM type
Type
OTP EPROM