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M27C160

M27C160, M27C160-100B1, M27C160-90B1

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Description

Parameters

ParameterM27C160-100B1M27C160-90B1
IC package
Package
42-DIP (600 mil)
Manufacturer
Manufacturer
STMicroelectronics
Working temperature
twork
0 ~ 70
Supply voltage
Vsup
4.5 V ~ 5.5 V
Query time
TQ
100 ns90 ns
Memory organization
Structure
16M (2M x 8 or 1M x 16)
Memory connection interface
Interface
Параллельный
ROM type
Type
OTP EPROM