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| Parameter | TC55VCM316BTGN55LA | |
|---|---|---|
IC package | Package | 48-TSOP |
Manufacturer | Manufacturer | Toshiba |
Working temperature | twork | -40 ~ 85 |
Supply voltage | Vsup | 2.3 V ~ 3.6 V |
Query time | TQ | 55 ns |
Memory organization | Structure | 8M (512K x 16) |
Memory connection interface | Interface | Параллельный |
RAM type | Type | SRAM |