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| Parameter | IDT6116LA35SO | IDT6116LA35SO/2316 | IDT6116LA35SO8 | IDT6116LA35SOG | IDT6116LA35SOG8 | IDT6116LA35SOGI | IDT6116LA35SOGI8 | IDT6116LA35TP | IDT6116LA35TPG | IDT6116LA35TPGI | |
|---|---|---|---|---|---|---|---|---|---|---|---|
IC package | Package | 24-SOIC (7.5мм ширина) | 24-SOIC (7.5мм ширина) | 24-SOIC (7.5мм ширина) | 24-SOIC (7.5мм ширина) | 24-SOIC (7.5мм ширина) | 24-SOIC (7.5мм ширина) | 24-SOIC (7.5мм ширина) | 24-DIP | 24-DIP | 24-DIP |
Manufacturer | Manufacturer | IDT, Integrated Device Technol | |||||||||
Working temperature | twork | 0 ~ 70 | 0 ~ 70 | 0 ~ 70 | 0 ~ 70 | 0 ~ 70 | -40 ~ 85 | -40 ~ 85 | 0 ~ 70 | 0 ~ 70 | -40 ~ 85 |
Supply voltage | Vsup | 4.5 V ~ 5.5 V | |||||||||
Query time | TQ | 35 ns | |||||||||
Memory organization | Structure | 2k x 8 | |||||||||
Memory connection interface | Interface | Параллельный | |||||||||
RAM type | Type | SRAM | |||||||||