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| Parameter | IDT6116LA20SO | IDT6116LA20SO8 | IDT6116LA20SOG | IDT6116LA20SOG8 | IDT6116LA20SOGI | IDT6116LA20SOGI8 | IDT6116LA20TP | IDT6116LA20TPG | IDT6116LA20TPGI | |
|---|---|---|---|---|---|---|---|---|---|---|
IC package | Package | 24-SOIC (7.5мм ширина) | 24-SOIC (7.5мм ширина) | 24-SOIC (7.5мм ширина) | 24-SOIC (7.5мм ширина) | 24-SOIC (7.5мм ширина) | 24-SOIC (7.5мм ширина) | 24-DIP | 24-DIP | 24-DIP |
Manufacturer | Manufacturer | IDT, Integrated Device Technol | ||||||||
Working temperature | twork | 0 ~ 70 | 0 ~ 70 | 0 ~ 70 | 0 ~ 70 | -40 ~ 85 | -40 ~ 85 | 0 ~ 70 | 0 ~ 70 | -40 ~ 85 |
Supply voltage | Vsup | 4.5 V ~ 5.5 V | ||||||||
Query time | TQ | 20 ns | ||||||||
Memory organization | Structure | 2k x 8 | ||||||||
Memory connection interface | Interface | Параллельный | ||||||||
RAM type | Type | SRAM | ||||||||