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Parameter | BQ4010LYMA-70N | BQ4010MA-150 | BQ4010MA-200 | BQ4010MA-70 | BQ4010MA-85 | BQ4010YMA-150 | BQ4010YMA-150N | BQ4010YMA-200 | BQ4010YMA-70 | BQ4010YMA-70N | BQ4010YMA-85 | BQ4010YMA-85N | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IC package | Package | 28-DIP Module (600 mil) | |||||||||||
Manufacturer | Manufacturer | Texas Instruments | |||||||||||
Working temperature | twork | -40 ~ 85 | 0 ~ 70 | 0 ~ 70 | 0 ~ 70 | 0 ~ 70 | 0 ~ 70 | -40 ~ 85 | 0 ~ 70 | 0 ~ 70 | -40 ~ 85 | 0 ~ 70 | -40 ~ 85 |
Supply voltage | Vsup | 3 V ~ 3.6 V | 4.75 V ~ 5.5 V | 4.75 V ~ 5.5 V | 4.75 V ~ 5.5 V | 4.75 V ~ 5.5 V | 4.5 V ~ 5.5 V | 4.5 V ~ 5.5 V | 4.5 V ~ 5.5 V | 4.5 V ~ 5.5 V | 4.5 V ~ 5.5 V | 4.5 V ~ 5.5 V | 4.5 V ~ 5.5 V |
Query time | TQ | 70 ns | 150 ns | 200 ns | 70 ns | 85 ns | 150 ns | 150 ns | 200 ns | 70 ns | 70 ns | 85 ns | 85 ns |
Memory organization | Structure | 8k x 8 | |||||||||||
Memory connection interface | Interface | Параллельный | |||||||||||
RAM type | Type | NVSRAM (Non-Volatile SRAM) |