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MT47H64M8B6-25:DTR

MT47H64M8, MT47H64M8B6-25:DTR, MT47H64M8B6-25E:DTR, MT47H64M8B6-25EIT:DTR, MT47H64M8B6-25EL:DTR, MT47H64M8B6-37E:DTR, MT47H64M8B6-37EIT:DTR, MT47H64M8B6-3:DTR, MT47H64M8B6-3IT:DTR, MT47H64M8B6-5E:DTR, MT47H64M8B6-5EIT:DTR, MT47H64M8CB-25:B, MT47H64M8CB-25:BTR, MT47H64M8CB-37E:B, MT47H64M8CB-37E:BTR, MT47H64M8CB-37EIT:B, MT47H64M8CB-37EIT:BTR, MT47H64M8CB-37V:B, MT47H64M8CB-37V:BTR, MT47H64M8CB-3:B, MT47H64M8CB-3:BTR, MT47H64M8CB-5E:B, MT47H64M8CB-5E:BTR, MT47H64M8CB-5EIT:B, MT47H64M8CB-5EIT:BTR

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Description

Parameters

ParameterMT47H64M8B6-25:DTRMT47H64M8B6-25E:DTRMT47H64M8B6-25EIT:DTRMT47H64M8B6-25EL:DTRMT47H64M8B6-37E:DTRMT47H64M8B6-37EIT:DTRMT47H64M8B6-3:DTRMT47H64M8B6-3IT:DTRMT47H64M8B6-5E:DTRMT47H64M8B6-5EIT:DTRMT47H64M8CB-25:BMT47H64M8CB-25:BTRMT47H64M8CB-37E:BMT47H64M8CB-37E:BTRMT47H64M8CB-37EIT:BMT47H64M8CB-37EIT:BTRMT47H64M8CB-37V:BMT47H64M8CB-37V:BTRMT47H64M8CB-3:BMT47H64M8CB-3:BTRMT47H64M8CB-5E:BMT47H64M8CB-5E:BTRMT47H64M8CB-5EIT:BMT47H64M8CB-5EIT:BTR
IC package
Package
60-FBGA
Manufacturer
Manufacturer
Micron Technology Inc
Working temperature
twork
0 ~ 850 ~ 85-40 ~ 850 ~ 850 ~ 85-40 ~ 850 ~ 85-40 ~ 850 ~ 85-40 ~ 850 ~ 850 ~ 850 ~ 850 ~ 85-40 ~ 85-40 ~ 850 ~ 850 ~ 850 ~ 850 ~ 850 ~ 850 ~ 85-40 ~ 85-40 ~ 85
Supply voltage
Vsup
1.7 V ~ 1.9 V
Query time
TQ
2.5 ns2.5 ns2.5 ns2.5 ns3.75 ns3.75 ns3 ns3 ns5 ns5 ns2.5 ns2.5 ns3.75 ns3.75 ns3.75 ns3.75 ns3.75 ns3.75 ns3 ns3 ns5 ns5 ns5 ns5 ns
Memory organization
Structure
512M (64M x 8)
Memory connection interface
Interface
Параллельный
RAM type
Type
DDR2 SDRAM