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MT47H64M16

MT47H64M16, MT47H64M16B7-37E:A, MT47H64M16B7-37E:ATR, MT47H64M16B7-5E:A, MT47H64M16B7-5E:ATR, MT47H64M16BT-37E:A, MT47H64M16BT-3:ATR, MT47H64M16BT-5E:A, MT47H64M16HR-25EIT:G, MT47H64M16HR-25EIT:GTR, MT47H64M16HR-25EL:G, MT47H64M16HR-25EL:GTR, MT47H64M16HR-3:ETR, MT47H64M16HR-3:GTR, MT47H64M16HR-3IT:G, MT47H64M16HR-3IT:GTR, MT47H64M16HR-3L:G, MT47H64M16HR-3L:GTR

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Description

Parameters

ParameterMT47H64M16B7-37E:AMT47H64M16B7-37E:ATRMT47H64M16B7-5E:AMT47H64M16B7-5E:ATRMT47H64M16BT-37E:AMT47H64M16BT-3:ATRMT47H64M16BT-5E:AMT47H64M16HR-25EIT:GMT47H64M16HR-25EIT:GTRMT47H64M16HR-25EL:GMT47H64M16HR-25EL:GTRMT47H64M16HR-3:ETRMT47H64M16HR-3:GTRMT47H64M16HR-3IT:GMT47H64M16HR-3IT:GTRMT47H64M16HR-3L:GMT47H64M16HR-3L:GTR
IC package
Package
92-FBGA92-FBGA92-FBGA92-FBGA92-FBGA92-FBGA92-FBGA84-FBGA84-FBGA84-FBGA84-FBGA84-FBGA84-FBGA84-FBGA84-FBGA84-FBGA84-FBGA
Manufacturer
Manufacturer
Micron Technology Inc
Working temperature
twork
0 ~ 850 ~ 850 ~ 850 ~ 850 ~ 850 ~ 850 ~ 85-40 ~ 85-40 ~ 850 ~ 850 ~ 850 ~ 850 ~ 85-40 ~ 85-40 ~ 850 ~ 850 ~ 85
Supply voltage
Vsup
1.7 V ~ 1.9 V
Query time
TQ
3.75 ns3.75 ns5 ns5 ns3.75 ns3 ns5 ns2.5 ns2.5 ns2.5 ns2.5 ns3 ns3 ns3 ns3 ns3 ns3 ns
Memory organization
Structure
1G (64M x 16)
Memory connection interface
Interface
Параллельный
RAM type
Type
DDR2 SDRAM