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| Parameter | К176ИЕ3 | |
|---|---|---|
IC package | Package | 201.14-1 |
Analog | Analog | HEF4017 |
IC manufacture technology | Technology | MOS |
IC series | Series | 176 |
Supply voltage | Vsup | 3 V ~ 15 V |
Number of elements of the same type in single chip | Elements | |
Signal delay time from input to output | td | 50 ns |
Power consumption per gate | Pвент | 400 nW |