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565РУ6В

565РУ6, 565РУ6В, 565РУ6Г, 565РУ6Д, КР565РУ6Б, КР565РУ6В, КР565РУ6Г, КР565РУ6Д

Description

The microcircuits are a dynamic random-access memory (RAM) with a capacity of 16384 bits (16x1); for KR565RU61D, KR565RU62D capacity is 8 kbits (8x1), with the control circuits. Contain 74210 integrated elements. Package type 2103.16-2, weight not more than 2.5 g.

КР565РУ6 graphical representation (symbol)

Pin assignment

1, 9 - free
2 - information input DI
3 - input signal “write-read" W / R
4 - input of the RAS row selection signal
5 - address input A0
6 - address input A2
7 - address input A1
8 - supply voltage
10 - address input A5
11 - address input A4
12 - address input A3
13 - address input A6
14 - information output D0
15 - input signal selection columns CAS
16 - common.

Truth table

Inputs Output State
RAS CAS WR DI DO
1 1 X X Z Chip not selected
1 0 X X Z Chip not selected
0 1 X X Z Regeneration
0 0 0 0/1 Z Write 0/1
0 0 1 X 0/1 Reading

Recommendations for the use of KR565RU6

The permissible value of the static potential is 100 V. After wiring microcircuits with boards must be varnished in no less than 3 layers.

After applying voltage to the IC, it goes into normal operation after 2 ms and then after 16 cycles of regeneration type. The status of address code A0 when the GAS signal is “0” is for KR565RU61D, “1” is for KR565RU62D. Regeneration is carried out according to the RAS signal for 128 cycles by searching addresses A0 ... A6.

Parameters

Parameter565РУ6В565РУ6Г565РУ6ДКР565РУ6БКР565РУ6ВКР565РУ6ГКР565РУ6Д
Power dissipation
P
<125 mW<125 mW<125 mW<150 mW<140 mW<130 mW<120 mW
IC package
Package
2104.18-1, 201.9-1, 16-QSOP, 201.16-172104.18-1, 201.9-1, 16-QSOP, 201.16-172104.18-1, 201.9-1, 16-QSOP, 201.16-172104.18-1, 201.9-1, 16-QSOP, 2103.16-22104.18-1, 201.9-1, 16-QSOP, 2103.16-22104.18-1, 201.9-1, 16-QSOP, 2103.16-22104.18-1, 201.9-1, 16-QSOP, 2103.16-2
IC manufacture technology
Technology
MOS
IC series
Series
565
Logic gate family
Logic
P-MOS
Query time
TQ
<150 ns<200 ns<250 ns<120 ns<150 ns<200 ns<250 ns
Memory organization
Structure
16k x 1