BC337_J35Z

BC337, BC337-016G, BC337-025, BC337-025G, BC337-040, BC337-040G, BC337,112, BC337,116, BC337,126, BC337-16,112, BC337-16,126, BC337-16-AP, BC337-16RL1, BC337-16RL1G, BC337-16ZL1, BC337-16ZL1G, BC337-25,112, BC337-25,116, BC337-25,126, BC337-25-AP, BC337-25RL1G, BC337-25ZL1, BC337-25ZL1G, BC337-40,116, BC337-40,412, BC337-40-AP, BC337-40RL1, BC337-40RL1G, BC337-40ZL1, BC337-40ZL1G, BC337A, BC337ABU, BC337A_J35Z, BC337-AP, BC337BU, BC337G, BC337_J35Z, BC337RL1, BC337RL1G, BC337TF, BC337TFR, BC337ZL1, BC337ZL1G

На цій сторінці плануєся додати дані у найближчому майбутньому.

Якщо Ви зацікавлені в даній информации, будь ласка, натисніть кнопку "Проголосувати".Це дасть нам знати, яку інформацію додати в першу чергу.

Опис

Параметри

ПараметрBC337-016GBC337-025BC337-025GBC337-040BC337-040GBC337,112BC337,116BC337,126BC337-16,112BC337-16,126BC337-16-APBC337-16RL1BC337-16RL1GBC337-16ZL1BC337-16ZL1GBC337-25,112BC337-25,116BC337-25,126BC337-25-APBC337-25RL1GBC337-25ZL1BC337-25ZL1GBC337-40,116BC337-40,412BC337-40-APBC337-40RL1BC337-40RL1GBC337-40ZL1BC337-40ZL1GBC337ABC337ABUBC337A_J35ZBC337-APBC337BUBC337GBC337_J35ZBC337RL1BC337RL1GBC337TFBC337TFRBC337ZL1BC337ZL1G
Корпус мікросхеми
Корпус
TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226, TO-92-3 (Standard Body), TO-226
Виробник
Виробник
ON SemiconductorON SemiconductorON SemiconductorON SemiconductorON SemiconductorNXP SemiconductorsNXP SemiconductorsNXP SemiconductorsNXP SemiconductorsNXP SemiconductorsMicro Commercial CoON SemiconductorON SemiconductorON SemiconductorON SemiconductorNXP SemiconductorsNXP SemiconductorsNXP SemiconductorsMicro Commercial CoON SemiconductorON SemiconductorON SemiconductorNXP SemiconductorsNXP SemiconductorsMicro Commercial CoON SemiconductorON SemiconductorON SemiconductorON SemiconductorFairchild SemiconductorFairchild SemiconductorFairchild SemiconductorMicro Commercial CoFairchild SemiconductorON SemiconductorFairchild SemiconductorON SemiconductorON SemiconductorFairchild SemiconductorFairchild SemiconductorON SemiconductorON Semiconductor
Тип монтажу компонента на плату чи в схему
Монтаж
Крізь отвір
Постійний струм колектора транзистора
IC
<800 мА<800 мА<800 мА<800 мА<800 мА<500 мА<500 мА<500 мА<500 мА<500 мА<800 мА<800 мА<800 мА<800 мА<800 мА<500 мА<500 мА<500 мА<800 мА<800 мА<800 мА<800 мА<500 мА<500 мА<800 мА<800 мА<800 мА<800 мА<800 мА<800 мА<800 мА<800 мА<800 мА<800 мА<800 мА<800 мА<800 мА<800 мА<800 мА<800 мА<800 мА<800 мА
Напруга між колектором і емітером транзистора при розімкнутому ланцюзі бази і заданому струмі емітера
UCEO
<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<60 В<60 В<60 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В<45 В
Постійна потужність, що може розсіюватись на колекторі транзистора
PC
<625 мВт
Статичний коефіціент передачі струму біполярного транзистора
hFE
>100Ic, Vce = 100mA, 1V>160Ic, Vce = 100mA, 1V>160Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 300mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>160Ic, Vce = 100mA, 1V>160Ic, Vce = 100mA, 1V>160Ic, Vce = 100mA, 1V>160Ic, Vce = 300mA, 1V>160Ic, Vce = 100mA, 1V>160Ic, Vce = 100mA, 1V>160Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V>250Ic, Vce = 300mA, 1V>250Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V>250Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>60Ic, Vce = 300mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V>100Ic, Vce = 100mA, 1V
Напруга насичення між колектором і емітером транзистора
UCE-sat
<700 мВIb, Ic = 50mA, 500mA
Гранична частота коефіцієнта передачі струму біполярного транзистора
fh21
<210 МГц<210 МГц<210 МГц<210 МГц<210 МГц<100 МГц<100 МГц<100 МГц<100 МГц<100 МГц<210 МГц<210 МГц<210 МГц<210 МГц<210 МГц<100 МГц<100 МГц<100 МГц<210 МГц<210 МГц<210 МГц<210 МГц<100 МГц<100 МГц<210 МГц<210 МГц<210 МГц<210 МГц<210 МГц<100 МГц<100 МГц<100 МГц<210 МГц<100 МГц<210 МГц<100 МГц<210 МГц<210 МГц<100 МГц<100 МГц<210 МГц<210 МГц
Структура біполярного транзистора
Структура
NPN
Струм відсічення колектора
Ifrc
<100 нА<100 нА<100 нА<100 нА<100 нА<100 нА<100 нА<100 нА<100 нА<100 нА<200 нА<100 нА<100 нА<100 нА<100 нА<100 нА<100 нА<100 нА<200 нА<100 нА<100 нА<100 нА<100 нА<100 нА<200 нА<100 нА<100 нА<100 нА<100 нА<100 нА<100 нА<100 нА<200 нА<100 нА<100 нА<100 нА<100 нА<100 нА<100 нА<100 нА<100 нА<100 нА