2П707В2

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Parameter		КП707А	КП707Б	КП707В	КП707Г	КП707Д	КП707Е	КП707А1	КП707Б1	КП707В1	КП707Г1	КП707Д1	КП707Е1	2П707В2
Power dissipation	P	<100 W	<100 W	<100 W	<100 W	<100 W	<100 W	<50 W	<50 W	<50 W	<50 W	<50 W	<50 W	(not set)
Slope of a field effect transistor	S1-S2/I	>1500при Iс = 3 А
Gate leakage current with connected drain and source	I_G	100 µA
Input capacitance of field effect transistor	C_iss	1.2 nF
Feedthrough capacitance	C₁₂	80 pF
Continuous voltage between gate and source	U_GS	<20 V
Continuous voltage between drain and source	U_DSS	<400 V	<600 V	(not set)	<700 V	<500 V	<750 V	<400 V	<600 V	<800 V	<700 V	<500 V	<750 V	(not set)
Continuous drain current	I_DSS	<15 A	<10 A	<7 A	<8 A	<12 A	<8 A	<15 A	<10 A	<7 A	<8 A	<12 A	<8 A	(not set)
Technology of field-effect transistor	Technology	MOSFET
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<1 Ω	<2 Ω	<4 Ω	<2.5 Ω	<1.5 Ω	<5 Ω	<1 Ω	<2 Ω	<4 Ω	<2.5 Ω	<1.5 Ω	<5 Ω	(not set)

Nothing found