3П910А-2
АП910, АП910А-2, АП910Б-2, 3П910А-2, 3П910Б-2
Documents
Description
Parameters
| Parameter | АП910А-2 | АП910Б-2 | 3П910А-2 | 3П910Б-2 | |
|---|---|---|---|---|---|
IC package | Package | 210А.22-3 | |||
Power dissipation | P | <1.5 W | <3 W | (not set) | (not set) |
Slope of a field effect transistor | S1-S2/I | >50при Uси = 3 В | >100при Uси = 3 В | >100 | >100 |
Gate leakage current with connected drain and source | IG | 1 µA | |||
Continuous voltage between gate and source | UGS | <3.5 V | |||
Technology of field-effect transistor | Technology | Schottky | |||
FET channel type | Channel | N-ch | |||