КТ938-2

КТ938, КТ938-2

High-frequency silicon transistor of high power for operation in power amplification, generation, frequency multiplication circuits in the range up to 5 GHz in modes with collector current cut-off according to a scheme with a common base at a supply voltage of 20 V

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter		КТ938-2
No results found.