КТ907

High-frequency silicon transistor of high power for operation in power amplification, generation, frequency multiplication circuits in the range of 100-400 MHz in modes with collector current cutoff and in pulse circuits with a supply voltage of 28 V

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter		КТ907
No results found.