2Т653

High-frequency silicon transistor of medium power for operation in switching and linear circuits, converting and other devices of secondary power sources

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter		2Т653
No results found.