КТ3168-9
КТ3168, КТ3168А-9, КТ3168-9
High-frequency low-power silicon low-noise transistor (3dB at 1 GHz)
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Description
Parameters
| Parameter | КТ3168А-9 | КТ3168-9 | |
|---|---|---|---|
Collector surge current | IC-i | <56 mA | |
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <15 V | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V | |
Constant power dissipated on the transistor collector | PC | <180 mW | |
Static current transfer coefficient of bipolar transistor | hFE | 60 ~ 180 | |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <500 nA | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <3 GHz | |
Noise factor | NF | <3 dB | |
Bipolar transistor structure | Structure | NPN | |