Доход от майнинга

КТ3130-9

КТ3130, КТ3130А-9, КТ3130Б-9, КТ3130В-9, КТ3130Г-9, КТ3130Д-9, КТ3130Е-9, КТ3130Ж-9, КТ3130-9

High-frequency low-power silicon transistor with a normalized noise level at a frequency of 1 kHz, for use in the input stages of low-noise amplifiers, high-frequency amplifiers, generators, voltage regulators

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterКТ3130А-9КТ3130Б-9КТ3130В-9КТ3130Г-9КТ3130Д-9КТ3130Е-9КТ3130Ж-9КТ3130-9
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<50 V<50 V<30 V<20 V<30 V<20 V<30 V(not set)
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V<50 V<30 V<20 V<30 V<20 V<30 V(not set)
Constant power dissipated on the transistor collector
PC
<100 mW
Static current transfer coefficient of bipolar transistor
hFE
100 ~ 250200 ~ 500200 ~ 500400 ~ 1000200 ~ 500400 ~ 1000100 ~ 500(not set)
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<100 nA<100 nA<100 nA<50.1 µA<100 nA<100 nA<100 nA(not set)
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<150 MHz
Noise factor
NF
<10 dB<10 dB<10 dB<10 dB<10 dB<4 dB<4 dB(not set)
Bipolar transistor structure
Structure
NPN