КТ391-2
КТ391, КТ391А-2, КТ391Б-2, КТ391В-2, КТ391-2
High-frequency low-power silicon transistor with a normalized noise level of 3.6 GHz for use in the input and subsequent stages of microwave amplifiers
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Description
Parameters
| Parameter | КТ391А-2 | КТ391Б-2 | КТ391В-2 | КТ391-2 | |
|---|---|---|---|---|---|
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <15 V | <15 V | <10 V | (not set) |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <10 V | |||
Constant power dissipated on the transistor collector | PC | <70 mW | |||
Static current transfer coefficient of bipolar transistor | hFE | >20 | |||
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <500 nA | <600 nA | <500 nA | (not set) |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <5 GHz | <5 GHz | <4 GHz | (not set) |
Noise factor | NF | <4.5 dB | <5.5 dB | (not set) | (not set) |
Bipolar transistor structure | Structure | NPN | |||