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| Parameter | MSD2714AT1G | |
|---|---|---|
IC package | Package | SC-59-3, SMT3, SOT-346, TO-236 |
Manufacturer | Manufacturer | ON Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <25 V |
Constant power dissipated on the transistor collector | PC | <300 mW |
Static current transfer coefficient of bipolar transistor | hFE | >901mA, 6V |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | 650 MHz |
Noise factor | NF | |
Bipolar transistor structure | Structure | NPN |
Number of elements of the same type in single chip | Elements | 1 |
Amplification gain (out-to-in ratio) | KdB |