MRF559

MRF559, MRF559G

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Description

Parameters

ParameterMRF559G
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<150 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<16 V
Constant power dissipated on the transistor collector
PC
<2 W
Static current transfer coefficient of bipolar transistor
hFE
>3050mA, 10V
Noise factor
NF
Bipolar transistor structure
Structure
NPN
Number of elements of the same type in single chip
Elements
1
Amplification gain (out-to-in ratio)
KdB
8 dB ~ 9.5 dB