MRF555T

MRF555, MRF555T

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Description

Parameters

ParameterMRF555T
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<500 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<16 V
Constant power dissipated on the transistor collector
PC
<3 W
Static current transfer coefficient of bipolar transistor
hFE
>50100mA, 5V
Noise factor
NF
Bipolar transistor structure
Structure
NPN
Number of elements of the same type in single chip
Elements
1
Amplification gain (out-to-in ratio)
KdB
11 dB ~ 12.5 dB