MMBTH10-4LT1G

MMBTH10, MMBTH10-4LT1, MMBTH10-4LT1G, MMBTH10-7, MMBTH10-7-F, MMBTH10LT1, MMBTH10LT1G, MMBTH10LT3G, MMBTH10M3T5G, MMBTH10RG

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Description

Parameters

ParameterMMBTH10-4LT1MMBTH10-4LT1GMMBTH10-7MMBTH10-7-FMMBTH10LT1MMBTH10LT1GMMBTH10LT3GMMBTH10M3T5GMMBTH10RG
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-723SOT-23-3, TO-236-3, Micro3™, SSD3, SST3, SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
ON SemiconductorON SemiconductorDiodes IncDiodes IncON SemiconductorON SemiconductorON SemiconductorON SemiconductorFairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<50 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<25 V<25 V<25 V<25 V<25 V<25 V<25 V<25 V<40 V
Constant power dissipated on the transistor collector
PC
<300 mW<300 mW<300 mW<300 mW<300 mW<300 mW<300 mW<640 mW<225 mW
Static current transfer coefficient of bipolar transistor
hFE
>604mA, 10V>1204mA, 10V>604mA, 10V>604mA, 10V>604mA, 10V>604mA, 10V>604mA, 10V>604mA, 10V>501mA, 6V
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
650 MHz800 MHz650 MHz650 MHz650 MHz650 MHz650 MHz650 MHz450 MHz
Noise factor
NF
Bipolar transistor structure
Structure
NPN
Number of elements of the same type in single chip
Elements
1
Amplification gain (out-to-in ratio)
KdB