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| Parameter | HSG1002VE-TL-E | |
|---|---|---|
IC package | Package | 4-MFP |
Manufacturer | Manufacturer | Renesas Technology America |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Continuous collector current | IC | <35 mA |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <3.5 V |
Constant power dissipated on the transistor collector | PC | <200 mW |
Static current transfer coefficient of bipolar transistor | hFE | >1005mA, 2V |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | 38 GHz |
Noise factor | NF | 1.2 dB ~ 1.8 dB5.8GHz |
Bipolar transistor structure | Structure | NPN |
Number of elements of the same type in single chip | Elements | 1 |
Amplification gain (out-to-in ratio) | KdB | 1.95 dB |