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| Parameter | BGB540E6327 | |
|---|---|---|
IC package | Package | SC-70-4, SC-82-4, SOT-323-4, SOT-343 |
Manufacturer | Manufacturer | Infineon Technologies |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Continuous collector current | IC | <30 mA |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <4.5 V |
Constant power dissipated on the transistor collector | PC | <120 mW |
Noise factor | NF | |
Bipolar transistor structure | Structure | NPN |
Number of elements of the same type in single chip | Elements | 1 |
Amplification gain (out-to-in ratio) | KdB | 17.5 dB |
Compression Point (P1dB) | P1dB | 12 dBm |