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| Parameter | BFS386L6E6327 | |
|---|---|---|
IC package | Package | TSLP-6-1 |
Manufacturer | Manufacturer | Infineon Technologies |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Continuous collector current | IC | <35 mA |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <6 V |
Constant power dissipated on the transistor collector | PC | <210 mW |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | 14 GHz |
Noise factor | NF | |
Bipolar transistor structure | Structure | NPN |
Number of elements of the same type in single chip | Elements | 2 |
Continuous collector current of 2nd transistor | IC2 | <80 mA |
Constant power dissipated of the 2nd transistor | P2 | <380 mW |
Amplification gain (out-to-in ratio) | KdB | 14.5 dB ~ 10 dB |
Compression Point (P1dB) | P1dB | 9 dBm |