BFS17

BFS17, BFS17,215, BFS17A,215, BFS17HTA, BFS17HTC, BFS17PE6327, BFS17PE6433, BFS17SE6327, BFS17TA, BFS17W,115, BFS17WE6327

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Description

Parameters

ParameterBFS17,215BFS17A,215BFS17HTABFS17HTCBFS17PE6327BFS17PE6433BFS17SE6327BFS17TABFS17W,115BFS17WE6327
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23SOT-23SC-70-6, SC-88, SOT-323-6, SOT-363SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-70-3, SOT-323-3SOT-323
Manufacturer
Manufacturer
NXP SemiconductorsNXP SemiconductorsDiodes/ZetexDiodes/ZetexInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesDiodes/ZetexNXP SemiconductorsInfineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<25 mA<25 mA<25 mA<25 mA<25 mA<25 mA<25 mA<25 mA<50 mA<25 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<15 V
Constant power dissipated on the transistor collector
PC
<300 mW<300 mW<330 mW<330 mW<280 mW<280 mW<280 mW<330 mW<300 mW<280 mW
Static current transfer coefficient of bipolar transistor
hFE
>252mA, 1V>252mA, 1V>702mA, 1V>702mA, 1V>402mA, 1V>402mA, 1V>402mA, 1V>2025mA, 1V>252mA, 1V>402mA, 1V
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
1 GHz2.8 GHz1.3 GHz1.3 GHz2.5 GHz2.5 GHz2.5 GHz1 GHz1.6 GHz2.5 GHz
Noise factor
NF
4.5 dB500MHz2.5 dB800MHz4.5 dB500MHz4.5 dB500MHz3.5 dB ~ 5 dB800MHz3.5 dB ~ 5 dB800MHz3 dB ~ 5 dB800MHz4.5 dB500MHz4.5 dB500MHz3.5 dB ~ 5 dB800MHz
Bipolar transistor structure
Structure
NPN
Number of elements of the same type in single chip
Elements
1
Amplification gain (out-to-in ratio)
KdB
Compression Point (P1dB)
P1dB
(not set)(not set)(not set)(not set)10 dBm10 dBm11 dBm(not set)(not set)11 dBm