BFR93A,215

BFR93, BFR93A,215, BFR93AE6327, BFR93AR,215, BFR93AW,115, BFR93AWE6327

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Description

Parameters

ParameterBFR93A,215BFR93AE6327BFR93AR,215BFR93AW,115BFR93AWE6327
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SC-70-3, SOT-323-3SOT-323
Manufacturer
Manufacturer
NXP SemiconductorsInfineon TechnologiesNXP SemiconductorsNXP SemiconductorsInfineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<35 mA<90 mA<35 mA<35 mA<90 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<12 V
Constant power dissipated on the transistor collector
PC
<300 mW<300 mW<350 mW<300 mW<300 mW
Static current transfer coefficient of bipolar transistor
hFE
>4030mA, 5V>7030mA, 8V>4030mA, 5V>4030mA, 5V>7030mA, 8V
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
6 GHz6 GHz6 GHz5 GHz6 GHz
Noise factor
NF
1.9 dB1GHz1.5 dB ~ 2.6 dB900MHz ~ 1.8GHz1.9 dB1GHz1.5 dB1GHz1.5 dB ~ 2.6 dB900MHz ~ 1.8GHz
Bipolar transistor structure
Structure
NPN
Number of elements of the same type in single chip
Elements
1
Amplification gain (out-to-in ratio)
KdB