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| Parameter | BFR750L3RHE6327 | |
|---|---|---|
IC package | Package | TSLP-3-9 |
Manufacturer | Manufacturer | Infineon Technologies |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Continuous collector current | IC | <90 mA |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <4 V |
Constant power dissipated on the transistor collector | PC | <360 mW |
Static current transfer coefficient of bipolar transistor | hFE | >16060mA, 3V |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | 37 GHz |
Noise factor | NF | 600 mdB ~ 1.1 dB1.8GHz ~ 6GHz |
Bipolar transistor structure | Structure | NPN |
Number of elements of the same type in single chip | Elements | 1 |
Amplification gain (out-to-in ratio) | KdB | 21 dB |
Compression Point (P1dB) | P1dB | 16.5 dBm |