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| Parameter | BFR740L3E6327 | BFR740L3RHE6327 | |
|---|---|---|---|
IC package | Package | TSLP-3-1 | |
Manufacturer | Manufacturer | Infineon Technologies | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Continuous collector current | IC | <30 mA | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <4 V | |
Constant power dissipated on the transistor collector | PC | <160 mW | |
Static current transfer coefficient of bipolar transistor | hFE | >16025mA, 3V | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | 42 GHz | |
Noise factor | NF | 500 mdB ~ 800 mdB1.8GHz ~ 6Ghz | |
Bipolar transistor structure | Structure | NPN | |
Number of elements of the same type in single chip | Elements | 1 | |
Amplification gain (out-to-in ratio) | KdB | 24 dB | 24.5 dB |
Compression Point (P1dB) | P1dB | 11 dBm | |