BFR360FE6327

BFR360, BFR360FE6327, BFR360FE6765, BFR360L3E6327, BFR360L3E6765, BFR360TE6327

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Description

Parameters

ParameterBFR360FE6327BFR360FE6765BFR360L3E6327BFR360L3E6765BFR360TE6327
IC package
Package
TSFP-3
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Continuous collector current
IC
<35 mA
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<6 V
Constant power dissipated on the transistor collector
PC
<210 mW
Static current transfer coefficient of bipolar transistor
hFE
>9015mA, 3V>9015mA, 3V>9015mA, 3V>9015mA, 3V>6015mA, 3V
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
14 GHz
Noise factor
NF
1 dB1.8GHz1 dB1.8GHz1 dB ~ 1.3 dB1.8GHz ~ 3GHz1 dB ~ 1.3 dB1.8GHz ~ 3GHz1 dB1.8GHz
Bipolar transistor structure
Structure
NPN
Number of elements of the same type in single chip
Elements
1
Amplification gain (out-to-in ratio)
KdB
15.5 dB15.5 dB16 dB ~ 11.5 dB16 dB ~ 11.5 dB13.5 dB ~ 9.5 dB
Compression Point (P1dB)
P1dB
9 dBm