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| Parameter | BFR182B6663 | BFR182E6327 | BFR182TE6327 | BFR182WE6327 | |
|---|---|---|---|---|---|
IC package | Package | SOT-23 | SOT-23 | SC-75 | SOT-323 |
Manufacturer | Manufacturer | Infineon Technologies | |||
Type of mounting a component on a board/circuit | Mount | Surface mount | |||
Continuous collector current | IC | <35 mA | |||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <12 V | |||
Constant power dissipated on the transistor collector | PC | <250 mW | |||
Static current transfer coefficient of bipolar transistor | hFE | >7010mA, 8V | >7010mA, 8V | >5010mA, 8V | >7010mA, 8V |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | 8 GHz | |||
Noise factor | NF | 900 mdB ~ 1.3 dB900MHz ~ 1.8GHz | 900 mdB ~ 1.3 dB900MHz ~ 1.8GHz | 1.2 dB ~ 1.9 dB900MHz ~ 1.8GHz | 900 mdB ~ 1.3 dB900MHz ~ 1.8GHz |
Bipolar transistor structure | Structure | NPN | |||
Number of elements of the same type in single chip | Elements | 1 | |||
Amplification gain (out-to-in ratio) | KdB | 18 dB ~ 12 dB | 18 dB ~ 12 dB | 20 dB | 19 dB |