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| Parameter | BFP520E6327 | BFP520FE6327 | |
|---|---|---|---|
IC package | Package | SC-70-4, SC-82-4, SOT-323-4, SOT-343 | TSFP-4 |
Manufacturer | Manufacturer | Infineon Technologies | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Continuous collector current | IC | <40 mA | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <2.5 V | |
Constant power dissipated on the transistor collector | PC | <100 mW | |
Static current transfer coefficient of bipolar transistor | hFE | >7020mA, 2V | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | 45 GHz | |
Noise factor | NF | 950 mdB1.8GHz | |
Bipolar transistor structure | Structure | NPN | |
Number of elements of the same type in single chip | Elements | 1 | |
Amplification gain (out-to-in ratio) | KdB | 23.5 dB | 22.5 dB |
Compression Point (P1dB) | P1dB | 12 dBm | 10.5 dBm |