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| Parameter | BFP405E6327 | BFP405E6433 | BFP405E6740 | BFP405FE6327 | |
|---|---|---|---|---|---|
IC package | Package | SC-70-4, SC-82-4, SOT-323-4, SOT-343 | SC-70-4, SC-82-4, SOT-323-4, SOT-343 | SC-70-4, SC-82-4, SOT-323-4, SOT-343 | TSFP-4 |
Manufacturer | Manufacturer | Infineon Technologies | |||
Type of mounting a component on a board/circuit | Mount | Surface mount | |||
Continuous collector current | IC | <12 mA | |||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <4.5 V | |||
Constant power dissipated on the transistor collector | PC | <55 mW | |||
Static current transfer coefficient of bipolar transistor | hFE | >605mA, 4V | |||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | 25 GHz | |||
Noise factor | NF | 1.25 dB1.8GHz | |||
Bipolar transistor structure | Structure | NPN | |||
Number of elements of the same type in single chip | Elements | 1 | |||
Amplification gain (out-to-in ratio) | KdB | 23 dB | 23 dB | 23 dB | 22.5 dB |
Compression Point (P1dB) | P1dB | 5 dBm | 5 dBm | 5 dBm | |