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| Parameter | BFG541,115 | |
|---|---|---|
IC package | Package | SOT-223 (3 leads + Tab), SC-73, TO-261AA |
Manufacturer | Manufacturer | NXP Semiconductors |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Continuous collector current | IC | <120 mA |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V |
Constant power dissipated on the transistor collector | PC | <650 mW |
Static current transfer coefficient of bipolar transistor | hFE | >6040mA, 8V |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | 9 GHz |
Noise factor | NF | 1.3 dB ~ 1.8 dB900MHz |
Bipolar transistor structure | Structure | NPN |
Number of elements of the same type in single chip | Elements | 1 |
Amplification gain (out-to-in ratio) | KdB | 15 dB ~ 9 dB |
Compression Point (P1dB) | P1dB | 21 dBm |