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| Parameter | BFG425W,115 | |
|---|---|---|
IC package | Package | SOT-343R |
Manufacturer | Manufacturer | NXP Semiconductors |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Continuous collector current | IC | <30 mA |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <4.5 V |
Constant power dissipated on the transistor collector | PC | <135 mW |
Static current transfer coefficient of bipolar transistor | hFE | >5025mA, 2V |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | 25 GHz |
Noise factor | NF | 1.2 dB2GHz |
Bipolar transistor structure | Structure | NPN |
Number of elements of the same type in single chip | Elements | 1 |
Amplification gain (out-to-in ratio) | KdB | 20 dB |