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| Parameter | BFG325W/XR,115 | BFG325/XR,215 | |
|---|---|---|---|
IC package | Package | SOT-343R | SOT-143, SOT-143B, TO-253AA |
Manufacturer | Manufacturer | NXP Semiconductors | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Continuous collector current | IC | <35 mA | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <6 V | |
Constant power dissipated on the transistor collector | PC | <210 mW | |
Static current transfer coefficient of bipolar transistor | hFE | >6015mA, 3V | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | 14 GHz | |
Noise factor | NF | 1.1 dB2GHz | |
Bipolar transistor structure | Structure | NPN | |
Number of elements of the same type in single chip | Elements | 1 | |
Amplification gain (out-to-in ratio) | KdB | 18.3 dB | |
Compression Point (P1dB) | P1dB | 8.7 dBm | |