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| Parameter | BFG135,115 | BFG135AE6327 | |
|---|---|---|---|
IC package | Package | SOT-223 (3 leads + Tab), SC-73, TO-261AA | |
Manufacturer | Manufacturer | NXP Semiconductors | Infineon Technologies |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Continuous collector current | IC | <150 mA | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V | |
Constant power dissipated on the transistor collector | PC | <1 W | |
Static current transfer coefficient of bipolar transistor | hFE | >80100mA, 10V | >80100mA, 8V |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | 7 GHz | 6 GHz |
Noise factor | NF | 1.5 dB ~ 2.6 dB900MHz ~ 1.8GHz | |
Bipolar transistor structure | Structure | NPN | |
Number of elements of the same type in single chip | Elements | 1 | |
Amplification gain (out-to-in ratio) | KdB | ||