H11B1S

H11B1, H11B1M, H11B1S, H11B1SD, H11B1SM, H11B1SR2M, H11B1SR2VM, H11B1VM, H11B1W

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Description

Parameters

ParameterH11B1MH11B1SH11B1SDH11B1SMH11B1SR2MH11B1SR2VMH11B1VMH11B1W
Type of mounting a component on a board/circuit
Mount
Through-holeSurface mountSurface mountSurface mountSurface mountSurface mountThrough-holeThrough-hole
Input current
Iin
<60 mA
Output voltage
Uout
<25 V
IC package
Package
6-DIP (300 mil), 6-DIP Wide6-DIP (300 mil), 6-SMD6-DIP (300 mil), 6-SMD6-DIP (300 mil), 6-SMD6-DIP (300 mil), 6-SMD6-DIP (300 mil), 6-SMD6-DIP (300 mil), 6-DIP Wide6-DIP (300 mil), 6-DIP Wide
Channels
Channels
1
Manufacturer
Manufacturer
Vishay/Semiconductors
Isolation Surge Voltage
UINS
<5.3 kVRMS
Saturation voltage between collector and emitter of transistor
UCE-sat
<1 V
Optocoupler input type
Input type
DC
Output current per channel
IOUT/CH
<100 mA
Transistor optocoupler output type
Output type
Darlington with Base
Current Transfer Ratio
K
>500 %1mA