2ST501T

2ST501T

High Voltage NPN Power Transistor

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Description

Parameters

Parameter2ST501T
IC package
Package
TO-220
Manufacturer
Manufacturer
STMicroelectronics
Type of mounting a component on a board/circuit
Mount
Through-hole
Continuous collector current
IC
<4 A
Collector surge current
IC-i
<8 A
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<350 V
Constant power dissipated on the transistor collector
PC
<100 W
Static current transfer coefficient of bipolar transistor
hFE
>2000
Saturation voltage between collector and emitter of transistor
UCE-sat
<1.5 V
Case temperature
tC
<150
Bipolar transistor structure
Structure
NPN Darlington
Transistor collector power with heatsink
PC-HS
<100 W
Saturation voltage between base and emitter of transistor
UBE-sat
<2 V