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| Parameter | TGF4250-SCC | |
|---|---|---|
IC package | Package | Die |
Manufacturer | Manufacturer | Triquint Semiconductor Inc |
Continuous voltage between drain and source | UDSS | 12 V |
Continuous drain current | IDSS | 1.18 A |
Technology of field-effect transistor | Technology | HFET |
Frequency | f | 8.5 GHz |
Number of elements of the same type in single chip | Elements | |
Amplification gain (out-to-in ratio) | KdB | 8.5 dB |