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| Parameter | TGF4118 | |
|---|---|---|
IC package | Package | Die |
Manufacturer | Manufacturer | Triquint Semiconductor Inc |
Continuous voltage between drain and source | UDSS | 12 V |
Continuous drain current | IDSS | 4.41 A |
Technology of field-effect transistor | Technology | HFET |
Frequency | f | 2.3 GHz |
Number of elements of the same type in single chip | Elements | |
P1dB | P1dB | 9 W |
Amplification gain (out-to-in ratio) | KdB | 11.5 dB |