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| Parameter | TGF2022-06 | TGF2022-12 | TGF2022-24 | TGF2022-48 | TGF2022-60 | |
|---|---|---|---|---|---|---|
IC package | Package | Die | ||||
Manufacturer | Manufacturer | Triquint Semiconductor Inc | ||||
Continuous voltage between drain and source | UDSS | 12.5 V | ||||
Continuous drain current | IDSS | 282 mA | 564 mA | 1.12 A | 2.25 A | 2.82 A |
Technology of field-effect transistor | Technology | pHEMT FET | ||||
Frequency | f | 10 GHz | ||||
Number of elements of the same type in single chip | Elements | |||||
Amplification gain (out-to-in ratio) | KdB | 12.9 dB | 12.9 dB | 12.9 dB | 12.9 dB | 12.3 dB |