PTFA091201EV4

PTFA091201, PTFA091201EV4, PTFA091201EV4R250, PTFA091201FV4, PTFA091201FV4R250, PTFA091201GLV1, PTFA091201GLV1R250, PTFA091201HLV1, PTFA091201HLV1R250

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Description

Parameters

Parameter		PTFA091201EV4	PTFA091201EV4R250	PTFA091201FV4	PTFA091201FV4R250	PTFA091201GLV1	PTFA091201GLV1R250	PTFA091201HLV1	PTFA091201HLV1R250
Manufacturer	Manufacturer	Infineon Technologies
Continuous voltage between drain and source	U_DSS	65 V
Continuous drain current	I_DSS	10 µA
Technology of field-effect transistor	Technology	LDMOS
Frequency	f	960 MHz
Number of elements of the same type in single chip	Elements
P1dB	P1dB	110 W
Amplification gain (out-to-in ratio)	KdB	19 dB	19 dB	19 dB	19 dB	18.5 dB	18.5 dB	18.5 dB	18.5 dB