PTFA081501FV1

PTFA081501, PTFA081501EV1, PTFA081501FV1

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterPTFA081501EV1PTFA081501FV1
Manufacturer
Manufacturer
Infineon Technologies
Continuous voltage between drain and source
UDSS
65 V
Continuous drain current
IDSS
10 µA
Technology of field-effect transistor
Technology
LDMOS
Frequency
f
900 MHz
Number of elements of the same type in single chip
Elements
MOSFET series
Series
GOLDMOS®
P1dB
P1dB
150 W
Amplification gain (out-to-in ratio)
KdB
18 dB