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| Parameter | PTF210451EV1 | PTF210451FV1 | |
|---|---|---|---|
Manufacturer | Manufacturer | Infineon Technologies | |
Continuous voltage between drain and source | UDSS | 65 V | |
Continuous drain current | IDSS | 1 µA | |
Technology of field-effect transistor | Technology | LDMOS | |
Frequency | f | 2.17 GHz | |
Number of elements of the same type in single chip | Elements | ||
MOSFET series | Series | GOLDMOS® | |
P1dB | P1dB | 45 W | |
Amplification gain (out-to-in ratio) | KdB | 14 dB | |